عنوان

Epitaxial growth of III-nitride compounds :

(Number (ISBN

3319766414

(Number (ISBN

9783319766416

Erroneous ISBN

3319766406

Erroneous ISBN

9783319766409

Title Proper

Epitaxial growth of III-nitride compounds :

General Material Designation

[Book]

Other Title Information

computational approach /

First Statement of Responsibility

Takashi Matsuoka, Yoshihiro Kangawa, editors.

Place of Publication, Distribution, etc.

Cham, Switzerland :

Name of Publisher, Distributor, etc.

Springer,

Date of Publication, Distribution, etc.

[2018]

Date of Publication, Distribution, etc.

©2018

Specific Material Designation and Extent of Item

1 online resource

Series Title

Springer series in materials science ;

Volume Designation

Volume 269

Text of Note

Includes bibliographical references and index.

Text of Note

Intro; Preface; Contents; Contributors; 1 Introduction; 1.1 Purpose of the Book; 1.2 Outline of the Book; References; Fundamentals of Computational Approach to Epitaxial Growth of III-Nitride Compounds; 2 Computational Methods; 2.1 Ab Initio Calculations; 2.1.1 Density-Functional Theory; 2.1.2 Plane-Wave Basis Set; 2.1.3 Ab Initio Pseudopotential Method; 2.2 Empirical Interatomic Potentials; 2.3 Monte Carlo Simulations; References; 3 Fundamental Properties of III-Nitride Compounds; 3.1 Crystal Structure and Structural Stability; 3.2 Electronic Band Structure.

Text of Note

3.3 Miscibility of III-Nitride Alloy Semiconductors3.4 Dislocation Core Structures; 3.5 Compositional Inhomogeneity Around Threading Dislocations; References; 4 Fundamental Properties of III-Nitride Surfaces; 4.1 Surface Phase Diagram Calculations; 4.2 Surface Reconstructions on III-Nitride Compounds; 4.2.1 Polar AlN\left({0001} \right) and \left({000\bar{1}} \right) Surfaces; 4.2.2 Nonpolar AlN\left({1\bar{1}00} \right) and \left({11\bar{2}0} \right) Surfaces; 4.2.3 Semipolar AlN\left({1\bar{1}01} \right) and \left({11\bar{2}0} \right) Surfaces.

Text of Note

4.2.4 Polar GaN\left({0001} \right) and \left({000\bar{1}} \right) Surfaces4.2.5 Nonpolar GaN\left({1\bar{1}00} \right) and \left({11\bar{2}0} \right) Surfaces; 4.2.6 Semipolar GaN\left({1\bar{1}01} \right) and \left({11\bar{2}0} \right) Surfaces; 4.2.7 Polar InN\left({0001} \right) and \left({000\bar{1}} \right) Surfaces; 4.2.8 Nonpolar InN\left({1\bar{1}00} \right) and \left({11\bar{2}0} \right) Surfaces; 4.2.9 Semipolar InN\left({1\bar{1}01} \right) and \left({11\bar{2}0} \right) Surfaces; 4.3 Hydrogen Adsorption on III-Nitride Compounds.

Text of Note

4.3.1 Structures of AlN Surfaces with Hydrogen4.3.2 Surface Phase Diagrams for Hydrogen Adsorption on AlN Surfaces; 4.3.3 Structures of GaN Surfaces with Hydrogen; 4.3.4 Surface Phase Diagrams for Hydrogen Adsorption on GaN Surfaces; 4.3.5 Structures of InN Surfaces with Hydrogen; 4.3.6 Surface Phase Diagrams for Hydrogen Adsorption on InN Surfaces; References; Applications of Computational Approach to Epitaxial Growth of III-Nitride Compounds; 5 Thermodynamic Approach to InN Epitaxy; 5.1 Thermodynamic Approach; 5.1.1 Modeling InN MOVPE; 5.1.2 Surface Energy Calculation.

Text of Note

5.2 Surface Phase Diagram of InN Under MOVPE Condition5.3 Growth of InN by Pressurized-Reactor MOVPE; References; 6 Atomic Arrangement and In Composition in InGaN Quantum Wells; 6.1 Atomic Arrangement in InGaN; 6.1.1 Stability of Tetrahedral Clusters; 6.1.2 Monte Carlo Simulation of InGaN MOVPE; 6.2 In Incorporation in InGaN QWs; 6.2.1 Effective Enthalpy of Mixing of Coherently Grown InGaN Layers; 6.2.2 Thermodynamic Analysis of InGaN Hetero-Epitaxy; References; 7 Initial Epitaxial Growth Processes of III-Nitride Compounds; 7.1 Adatom Kinetics on AlN Polar Surfaces During MOVPE.

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Text of Note

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

Source for Acquisition/Subscription Address

Springer Nature

Stock Number

com.springer.onix.9783319766416

Title

Epitaxial growth of III-nitride compounds.

International Standard Book Number

9783319766409

Epitaxy.

Nitrides.

Condensed matter physics (liquid state & solid state physics)

Electronic devices & materials.

Epitaxy.

Materials science.

Mathematical physics.

Nitrides.

Semi-conductors & super-conductors.

TECHNOLOGY & ENGINEERING-- Mechanical.

TEC-- 009070

TJFD

Number

Edition

Class number

Kangawa, Yoshihiro

Matsuoka, Takashi,1947-

Date of Transaction

20200823111220.0

Cataloguing Rules (Descriptive Conventions))

pn

Electronic name

[Book]

Y