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Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
پدید آورنده
Jacopo Franco • Ben Kaczer ,Guido Groeseneken
موضوع
Metal oxide semiconductor field-effect transistors > Reliability. Metal oxide semiconductors, Complementary > Reliability.
رده
E-Book
,
کتابخانه
Library of Foreign Languages and Islamic Sources
محل استقرار
استان:
Qom
ـ شهر:
Qom
تماس با کتابخانه :
37839111
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
9789400776623
NATIONAL BIBLIOGRAPHY NUMBER
Number
39769
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
General Material Designation
[electronic resources]
First Statement of Responsibility
Jacopo Franco • Ben Kaczer ,Guido Groeseneken
.PUBLICATION, DISTRIBUTION, ETC
Date of Publication, Distribution, etc.
Dordrecht : Springer, 2014.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xix, 187p.
Other Physical Details
ill.
SERIES
Series Title
Springer Series in Advanced Microelectronics 47
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Bibliography
TOPICAL NAME USED AS SUBJECT
Metal oxide semiconductor field-effect transistors > Reliability. Metal oxide semiconductors, Complementary > Reliability.
LIBRARY OF CONGRESS CLASSIFICATION
E-Book
,
PERSONAL NAME - PRIMARY RESPONSIBILITY
Franco, Jacopo, author. Contributor Kaczer, Ben, author. Groeseneken, Guido, author.
ORIGINATING SOURCE
Country
ایران
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب
BL
279177
a
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