Design and Development of GaN-Based Vertical Transistors for Increased Power Density in Power Electronics Applications
General Material Designation
[Thesis]
First Statement of Responsibility
Dong Ji
Subsequent Statement of Responsibility
Chowdhury, Srabanti
.PUBLICATION, DISTRIBUTION, ETC
Name of Publisher, Distributor, etc.
University of California, Davis
Date of Publication, Distribution, etc.
2017
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
155
GENERAL NOTES
Text of Note
Committee members: Islam, M. Saif; Luhmann, Neville C.
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Place of publication: United States, Ann Arbor; ISBN=978-0-355-76428-4
DISSERTATION (THESIS) NOTE
Dissertation or thesis details and type of degree
Ph.D.
Discipline of degree
Electrical and Computer Engineering
Body granting the degree
University of California, Davis
Text preceding or following the note
2017
SUMMARY OR ABSTRACT
Text of Note
Gallium nitride (GaN)-based devices have entered the power electronics market and shown excellent progress in the medium power conversion applications. For power conversions applications > 10 kW, devices with vertical geometry are preferred over lateral geometry, since the former allows more current for a given chip area, thus provides a more economical solution for high-voltage and high-current applications. Moreover, the vertical geometry is attractive for its dispersion-free performance without passivation, a phenomenon that causes high dynamic on-state resistance (Ron) in lateral geometry high electron mobility transistors (HEMTs).
TOPICAL NAME USED AS SUBJECT
Electrical engineering
UNCONTROLLED SUBJECT TERMS
Subject Term
Applied sciences;Cavet;Current aperture vertical electron transistor;Gallium nitride;Ogfet;Power transistor;Vertical transistor