عنوان
پدید آورنده
موضوع
رده
TK7871.95 .M27 2007
TK7871
.
95
.
M27
2007
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
1420012347
(Number (ISBN
9781420012347
Erroneous ISBN
0750309938
Erroneous ISBN
9780750309936
NATIONAL BIBLIOGRAPHY NUMBER
Number
b788532
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Strained-Si heterostructure field effect devices /
General Material Designation
[Book]
First Statement of Responsibility
C.K. Maiti, S. Chattopadhyay, L.K. Bera.
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York :
Name of Publisher, Distributor, etc.
Taylor & Francis,
Date of Publication, Distribution, etc.
©2007.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
1 online resource (423 pages) :
Other Physical Details
illustrations.
SERIES
Series Title
Series in materials science and engineering
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index.
CONTENTS NOTE
Text of Note
Computer generated contents: Chapt. 1. Introduction -- chapt. 2. Strain engineering in microelectronics -- chapt. 3. Strain-engineered substrates -- chapt. 4. Electronic properties of engineered substrates -- chapt. 5. Gate dielectrics on engineered substrates -- chapt. 6. Heterostructure sige/sigec MOSFETS -- chapt. 7. Strained-si heterostructure MOSFETS -- chapt. 8. Modeling and simulation of hetero-FETS.
0
SUMMARY OR ABSTRACT
Text of Note
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions of silicon heterostructure CMOS. After an introduction to the material.
ACQUISITION INFORMATION NOTE
Source for Acquisition/Subscription Address
Ingram Content Group
Stock Number
TANDF_191357
OTHER EDITION IN ANOTHER MEDIUM
Title
Strained-Si heterostructure field effect devices.
International Standard Book Number
9780750309936
PARALLEL TITLE PROPER
Parallel Title
Strained silicon heterostructure field effect devices
TOPICAL NAME USED AS SUBJECT
Metal oxide semiconductor field-effect transistors.
Silicon-- Electric properties.
Metal oxide semiconductor field-effect transistors.
Silicon-- Electric properties.
TECHNOLOGY & ENGINEERING-- Electronics-- Transistors.
(SUBJECT CATEGORY (Provisional
TEC-- 008110
DEWEY DECIMAL CLASSIFICATION
Number
621
.
3815/284
Edition
22
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK7871
.
95
Book number
.
M27
2007
PERSONAL NAME - PRIMARY RESPONSIBILITY
Maiti, C. K.
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
Bera, L. K.
Chattopadhyay, Swapan,1952-
ORIGINATING SOURCE
Date of Transaction
20201207020443.0
Cataloguing Rules (Descriptive Conventions))
pn
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب [Book]
Y
