عنوان
پدید آورنده
موضوع
رده
T 174 .7 .L86
T
174
.
7
.
L86
کتابخانه
محل استقرار
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Nanoscale transistors: device physics, modeling and simulation
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
Springer
Date of Publication, Distribution, etc.
c2006
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
vi, 217 p. : ill
GENERAL NOTES
Text of Note
Includes bibliographical references and index
NOTES PERTAINING TO TITLE AND STATEMENT OF RESPONSIBILITY
Text of Note
Mark S. Lundstrom, Jing Guo
ORIGINAL VERSION NOTE
Text of Note
1
Text of Note
2
Text of Note
3
Text of Note
4
Text of Note
5
Text of Note
6
Text of Note
7
TOPICAL NAME USED AS SUBJECT
Entry Element
، Nanotechnology
Entry Element
Mathematical models ، Metal oxide semiconductor field-effect transistors
Entry Element
Mathematical models ، Nanostructured materials
LIBRARY OF CONGRESS CLASSIFICATION
Class number
T
174
.
7
.
L86
OTHER CLASS NUMBERS
Class number
NO
PERSONAL NAME - PRIMARY RESPONSIBILITY
Entry Element
Lundstrom, Mark
Relator Code
AU
AU Guo, Jing 1977-
TI
