عنوان
پدید آورنده
موضوع
رده
TK,7871.96,.B55,S53,2008
TK
,
7871
.
96
,.
B55
,
S53
,
2008
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
Qualification
(alk. paper)
(Number (ISBN
9781420066852
NATIONAL BIBLIOGRAPHY NUMBER
Country Code
IR
Number
ebook42696
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
COUNTRY OF PUBLICATION OR PRODUCTlON
Country of publication
IR
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
SiGe and Si strained-layer epitaxy for silicon heterostructure devices
General Material Designation
[Electronic Resource]
First Statement of Responsibility
/ edited by John D. Cressler
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Boca Raton
Name of Publisher, Distributor, etc.
: CRC Press/Taylor & Francis,
Date of Publication, Distribution, etc.
, c2008.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
1 v. (various pagings)
Other Physical Details
: ill. ; 26 cm.
GENERAL NOTES
Text of Note
"The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--T.p. verso.
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
e
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index.
OTHER VARIANT TITLES
Variant Title
Silicon heterostructure handbook
TOPICAL NAME USED AS SUBJECT
Bipolar transistors--Materials
Heterostructures.
Silicon--Electric properties
Epitaxy.
DEWEY DECIMAL CLASSIFICATION
Number
621
.
3815
,
28
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK
,
7871
.
96
,.
B55
,
S53
,
2008
PERSONAL NAME - SECONDARY RESPONSIBILITY
Cressler, John D
ORIGINATING SOURCE
Country
ایران
LOCATION AND CALL NUMBER
Call Number
621.3815,28
ELECTRONIC LOCATION AND ACCESS
Date and Hour of Consultation and Access
9781420066852.pdf
Electronic Format Type
0
Electronic Format Type
0
old catalog
e
BL
1
a
Y
